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november 1996 NDP6020 / ndb6020 n-channel logic level enhancement mode field effect transistor general description features _______________________________________________________________________________ absolute maximum ratings t c = 25c unless otherwise noted symbol parameter NDP6020 ndb6020 units v dss drain-source voltage 20 v v dgr drain-gate voltage (r gs < 1 m w ) 20 v v gss gate-source voltage - continuous 8 v i d drain current - continuous 35 a - pulsed 100 p d total power dissipation @ t c = 25 c 60 w derate above 25 c 0.4 w/ c t j ,t stg operating and storage temperature range -65 to 175 c NDP6020 rev.c 35 a, 20 v. r ds(on ) = 0.023 w @ v gs = 4.5 v r ds(on ) = 0.028 w @ v gs = 2.7 v . critical dc electrical parameters specified at elevated temperature. rugged internal source-drain diode can eliminate the need for an external zener diode transient suppressor. 175c maximum junction temperature rating. high density cell design for extremely low r ds(on) . to-220 and to-263 (d 2 pak) package for both through hole and surface mount applications. these logic level n-channel enhancement mode power field effect transistors are produced using national's proprietary, high cell density, dmos technology. this very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. these devices are particularly suited for low voltage applications such as automotive, dc/dc converters, pwm motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. s d g ? 1997 fairchild semiconductor corporation
electrical characteristics (t c = 25c unless otherwise noted) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 20 v i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 a t j = 5 5c 10 ma i gssf gate - body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -8 v, v ds = 0 v -100 na on characteristics (note 1) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 0.4 0.62 1 v t j = 125c 0.2 0.35 0.7 r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 18 a 0.019 0.023 w t j = 125c 0.024 0.032 v gs = 2.7 v, i d = 16 a 0.024 0.028 i d (on) on-state drain current v gs = 4.5 v, v ds = 5 v 60 a g fs forward transconductance v ds = 5 v, i d = 18 a 29 s dynamic characteristics c iss input capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 1170 pf c oss output capacitance 610 pf c rss reverse transfer capacitance 180 pf switching ch aracteristics (note 1) t d(on) turn - on delay time v dd = 20 v, i d = 35 a, v gs = 5 v, r gen = 10 w r l = 0.5 w 7 20 ns t r turn - on rise time 148 300 ns t d(off) turn - off delay time 98 200 ns t f turn - off fall time 233 450 ns q g total gate charge v ds = 15 v, i d = 35 a, v gs = 5 v 32 45 nc q gs gate-source charge 6 nc q gd gate-drain charge 11 nc NDP6020 rev.c
electrical characteristics (t c = 25c unless otherwise noted) symbol parameter conditions min typ max units drain-source diode characteristics i s maximum continuous drain-source diode forward current 35 a i sm maximum pulsed drain-source diode forward current 100 a v sd drain-source diode forward voltage v gs = 0 v, i s = 35 a (note 1) 1.1 1.3 v t rr reverse recovery time v gs = 0 v, i f = 35 a, di f /dt = 100 a/s 43 90 ns i rr reverse recovery current 1.1 3 a thermal characteristics r q jc thermal resistance, junction-to-case 2.5 c/w r q ja thermal resistance, junction-to-ambient 62.5 c/w note: 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. NDP6020 rev.c
NDP6020 rev.c -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1 1.2 1.4 1.6 1.8 t , junction temperature (c) drain-source on-resistance j r , normalized ds(on) v = 4.5v gs i = 18a d -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1 1.2 1.4 t , junction temperature (c) gate-source threshold voltage j v , normalized th i = 250a d v = v gs ds 0 10 20 30 40 50 60 0.8 1 1.2 1.4 1.6 1.8 i , drain current (a) drain-source on-resistance 4.0 d r , normalized ds(on) 2.5 3.5 v = 2.0v gs 2.7 3.0 5.0 4.5 0 10 20 30 40 50 60 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 i , drain current (a) drain-source on-resistance v = 4.5 v gs t = 125c j 25c -55c d r , normalized ds(on) 0.5 1 1.5 2 0 5 10 15 20 v , gate to source voltage (v) i , drain current (a) 125c 25c v = 5v ds gs d t = -55c j typical electrical characteristics figure 1. on-region characteristics. figure 2. on-resistance variation wit h gate voltage and drain current . figure 3. on-resistance variation with temperature . figure 4. on-resistance variation with drain current and temperature . figure 5. transfer characteristics . figure 6. gate threshold variation with temperature . 0 1 2 3 4 5 0 10 20 30 40 50 60 v , drain-source voltage (v) i , drain-source current (a) v = 4.5v gs ds d 2.0 2.7 1.5 2.5 3.0 3.5
NDP6020 rev.c -50 -25 0 25 50 75 100 125 150 175 0.9 0.95 1 1.05 1.1 1.15 t , junction temperature (c) drain-source breakdown voltage bv , normalized dss j i =250a d 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 0.5 1 5 20 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c j 25c -55c v =0v gs sd s 0 8 16 24 32 40 0 2 4 6 8 q , gate charge (nc) v , gate-source voltage (v) g gs i = 35a d v = 10v ds 20v 15v 0.1 0.5 1 5 10 20 100 200 500 1000 1500 2000 3500 v , drain to source voltage (v) capacitance (pf) ds f = 1 mhz v = 0v gs c oss c rss c iss g d s v dd r gs r l v out v in dut r v gen gen 10% 50% 90% 10% 90% 90% 50% v in v out on off d(off) f r d(on) t t t t t t inverted 10% pulse width figure 7. breakdown voltage variation with temperature . figure 8. body diode forward voltage variation with current and temperature . figure 9. capacitance characteristics . figure 10. gate charge characteristics . figure 11. switching test circuit . figure 12. switching waveforms . typical electrical characteristics (continued)
NDP6020 rev.c 0 10 20 30 40 50 0 10 20 30 40 50 i , drain current (a) g , transconductance (siemens) t = -55c j d fs v = 5v ds 125c 25c figure 13. transconductance variation with drain current and temperature . figure 14 . maximum safe operating area . figure 15 . transient thermal response curve. typical electrical characteristics (continued) 0.5 1 2 3 5 10 20 30 2 5 10 20 50 100 150 v , drain-source voltage (v) i , drain current (a) ds d rds(on) limit 100ms 10us dc 10ms 1ms 100us v = 4.5v single pulse r = 2.5 c/w t = 25c c q jc gs 0.01 0.1 1 10 100 1000 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t ,time (ms) transient thermal resistance single pulse d = 0.5 0.1 0.05 0.02 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = 2.5 c/w q jc q jc q jc t - t = p * r (t) q jc c j p(pk) t 1 t 2 r(t), normalized effective 1 0.01
to-220 tape and reel data and package dimensions august 1999, rev. b 0.165 to-220 tube packing configuration: figur e 1.0 note/comments packaging option to-220 packaging information stan da rd (no f l ow code ) packaging type rail/tube qty per tube/box 45 box dimension (mm) 530x 130x 83 max qty per box 1,080 weight per unit (gm) 1.4378 s62z bulk 300 114x 102x 51 1,500 1.4378 fscint label fscint label 114mm x 102mm x 51mm eo70 immediate box 530mm x 130mm x 83mm intermediate box 300 units per eo70 box 5 eo70 boxe s per per interm ediate bo x 1500 uni ts maximum quantity per intermediate box an ti-stati c bubbl e sheets 45 units per tube conduct ive plastic bag 1080 uni ts maximum quantity per box 530mm x 130mm x 83mm intermediate box fscint label 12 tubes per bag note: all dim ensions are in inches f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l f 9852 ndp4060l 1.300 .015 0.080 0.032 .003 0.275 0.275 0.160 0.800 0.450 .030 20.000 +0.031 -0.065 0.123 +0.001 -0.003 l ot: cbvk741b019 nsid: fdp7060 d/c1: d9842 spec rev: b2 spec: qty: 1080 qa rev: fairchild semiconductor corporation htb:b (fscint) fscint labe l samp le to-220 tube configuration: figure 4.0 to-220 packaging information: figure 2.0 to-220 bulk packing configuration: figure 3.0 2 bags per box packaging description: to-220 parts are ship ped normally in tube. the tube is made of pvc plastic treated with anti -stati c agent.these tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recy cl ab le corrug ated pa pe r. on e b ox c on tai ns two ba gs max im um (see fi g. 1.0). and o ne or several o f these boxes are placed inside a labeled shipp ing bo x wh ic h c om es in d ifferen t si zes de pe ndi n g o n th e nu mber of parts ship ped. the other option comes in bulk as described in the packagin g information table. the unit s in this option are placed inside a small box laid w ith anti- static bubble sheet. these smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). these larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped.
to-220 (fs pkg code 37) to-220 tape and reel data and package dimensions, continued september 1998, rev. a 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 1.4378
to-263ab/d 2 pak packaging configuration: figure 1.0 components to-263ab/d 2 pak tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option to-263ab/d 2 pak packaging information standard (no flow code) l86z packaging type reel size tnr 13" dia rail/tube - qty per reel/tube/bag 800 45 box dimension (mm) 359x359x57 530x130x83 max qty per box 800 1,080 weight per unit (gm) 1.4378 1.4378 weight per reel 1.6050 - moisture sensitive label drypack bag esd label f63tnr label 359mm x 359mm x 57mm standard intermediate box to-263ab/d 2 pak unit orientation fdb603al f 9835 fdb603al f 9835 fdb603al f 9835 fdb603al f 9835 f63tnr label sample static dissipative embossed carrier tape f63tnr label antistatic cover tape esd label electrostatic sensitive devices do no t shi p or sto re n ear stro ng electrostatic electro magn eti c, mag netic o r r adio active fi eld s tnr date pt numb er peel stren gth min ___ __ ____ __ ___g ms max _____________ gms caution moisture sensitive label customized label lot: cbvk741b019 fsid: fdb6320l d/c1: d9842 qty1: spec rev: spec: qty: 800 d/c2: qty2: cpn: n/f: f (f63tnr)3 leader tape 1520mm minimum or 95 empty pockets trailer tape 400mm minimum or 25 empty pockets packaging description: to-263/d 2 pak parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 800 units per 13" or 330cm diameter reel. the reels are dark blue in color and is made of polystyrene plastic (anti- static coated). this and some other options are further described in the packaging information table. these full reels are individually barcode labeled, dry packed, and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. one box contains one reel maximum. and these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. to-263ab/d 2 pak tape and reel data and package dimensions september 1999, rev. b
p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 24mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.961 +0.078/-0.000 24.4 +2/0 1.197 30.4 0.941 e 0.1.079 23.9 e 27.4 see detail aa dim a max 13" diameter option dim a max w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 10 deg maximum component rotation 0.9mm maximum 0.9mm maximum sketch c (top view) component lateral movement typical component cavity center line 10 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed to-263ab/d 2 pak embossed carrier tape configuration: figure 3.0 to-263ab/d 2 pak reel configuration: figure 4.0 dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc t d 2 pak o263ab/ (24mm) 10.60 +/-0.10 15.80 +/-0.10 24.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 22.25 min 11.50 +/-0.10 16.0 +/-0.1 4.0 +/-0.1 4.90 +/-0.10 0.450 +/-0.150 21.0 +/-0.3 0.06 +/-0.02 to-263ab/d 2 pak tape and reel data and package dimensions, continued august 1999, rev. b
to-263ab/d 2 pak (fs pkg code 45) to-263ab/d 2 pak tape and reel data and package dimensions, continued august 1998, rev. a 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 1.4378
trademarks acex? coolfet? crossvolt? e 2 cmos tm fact? fact quiet series? fast ? fastr? gto? hisec? the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. syncfet? tinylogic? uhc? vcx? isoplanar? microwire? pop? powertrench qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 ? rev. d

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